Data Sheet PG10708EJ01V0DS
3
NE3515S02
TYPICAL CHARACTERISTICS
(TA
= +25?C, unless otherwise specified)
Remark
The graphs indicate
nominal characteristics.
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相关代理商/技术参数
NE3515S02-T1D-A 功能描述:射频GaAs晶体管 Super Low Noise Pseudomorphic RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS(最大值/最小值):4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
NE3516S02 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
NE3516S02-A 制造商:California Eastern Laboratories (CEL) 功能描述:SUPER LOW NOISE PSEUDOMORPHIC HJ FET, ROHS COMPLIANT - Product that comes on tape, but is not reeled 制造商:California Eastern Laboratories (CEL) 功能描述:IC HJ-FET RF N-CH S02 4-MICROX
NE3516S02-T1C 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
NE3516S02-T1C-A 制造商:California Eastern Laboratories (CEL) 功能描述:SUPER LOW NOISE PSEUDOMORPHIC HJ FET, ROHS COMPLIANT - Tape and Reel 制造商:California Eastern Laboratories (CEL) 功能描述:IC HJ-FET RF N-CH S02 4-MICROX
NE3516S02-T1D 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
NE3516S02-T1D-A 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
NE3517S03 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET